| Material: | Lithium Niobate Lithium Tantanlate |
|---|---|
| Diameter: | 3" 4" 6" 8" |
| Surface Orientation: | X-Cut or as Your Request |
| Film Thickness Average Thickness: | 300-600nm |
| Front Side /Face Roughness: | Optical Polished |
| Transport Package: | Carton Packing |
| Customization: |
|---|
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Audited Supplier Lithium Niobate Thin Films on Insulator is kind of POI (Piezoelectric On Insulator) wafer . It's stacked sequence structure is made of support substratesthat can be silicon, quartz, fused silica,sapphire or LN wafer, the interlayer is thermal oxide SiO2 that works as insulator and lithium niobate film is the functional layer above the insulation layer.
POI /LNOI engineered substrates enable the design of filters with high quality factor, large bandwidth, very low temperature sensitivity and low insertion loss with a simple device manufacturing technology. These wafers are developed and used for high speed modulators, high Q factor SAW devices, IR-detectors, THz devices.
We work with our strategical partner who has experiened at technology of smart cut and wafer bonding and supply with important Piezoelectric layer on LN/LT from the sizes of 3" 4" 6" up to 8" to build the special wafer with multilayered structure.
Specifications For LNOI
| Layers | Parameters | Specifications | |||
| Top Functional Layer | Material | Lithium Niobate Lithium Tantanlate | |||
| Diameter | 3" | 4" | 6" | 8" | |
| Surface orientation | X-cut or per request | ||||
| Primary flat oritentation | per request | deg(°) | |||
| Secondary flat orientation | per request | ||||
| Film Thickness average thickness | 300-600 | nm | |||
| Front side /face roughness | Optical polished | ||||
| Isolation Layer |
Buried Oxide avg thickness | 4600 | 4700 | 4800 | nm |
| Buried Oxide thickness uniformity | -5 | 0 | 5 | % | |
| Support substrate | Material | SI/LN/SAPPHIRE/QUARTZ/ETC | |||
| Diameter | 3" | 4" | 6" | 8" | |
| Support layer total thickness | 525 | 525 | 625 | 725 | |
| Device growth method | CZ | CZ | ZVD | hydrothermal | |
| Device orientation | {100} | 0.5 | deg(°) | ||
| Device doping type | N | N | |||
| Device dopant | Phos | ||||
| Surface finish | 10 | nm | |||
CQT's primary goal is "To be a reliable primary microelectronics substrates supplier in today's World". The entire organization, beginning with top management, has worked consistently to meet this goal.
Our reputation for quality is based on a commitment to the newest and most effective design, manufacturing, testing, and management procedures - including, but not limited to, design for manufacturing, statistical process control, lean manufacturing, and continuous improvement methodologies. We have had a fully implemented and effective IATF16949 Quality Management System.
CQT is committed to conduct its all operations in a socially responsible, ethical, and sustainable manner to protect the environment and ensure the safety and health of our employees, customers, and surrounding communities. We are also committed to continuous improvement on all environmental issues. CQT maintains ISO9001/ISO14001 certifications and also implements the EICC standards. and implemented the Electrical Industry Code of Conduct as well.
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